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| 2N7002K Small Signal MOSFET 60 V, 380 mA, Single, N-Channel, SOT-23 Features * * * * * * * * ESD Protected Low RDS(on) Surface Mount Package This is a Pb-Free Device http://onsemi.com V(BR)DSS 60 V RDS(on) MAX 1.6 W @ 10 V 2.5 W @ 4.5 V ID MAX (Note 1) 380 mA Applications Low Side Load Switch Level Shift Circuits DC-DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. Simplified Schematic Gate Unit V V mA Source 2 (Top View) 3 Drain 1 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (Note 1) Steady State t<5s Power Dissipation (Note 1) Steady State t<5s Pulsed Drain Current (tp = 10 ms) Operating Junction and Storage Temperature Range Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) Gate-Source ESD Rating (HBM, Method 3015) TA = 25C TA = 85C TA = 25C TA = 85C PD Symbol VDSS VGS ID Value 60 20 320 230 380 270 300 420 1.5 -55 to +150 300 260 2000 mW 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 IDM TJ, TSTG IS TL ESD A C mA C V 1 2 SOT-23 CASE 318 STYLE 21 704 MG G 1 2 Gate Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 704 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Symbol RqJA RqJA Max 417 300 Unit C/W ORDERING INFORMATION Device 2N7002KT1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 July, 2008 - Rev. 4 1 Publication Order Number: 2N7002K/D 2N7002K ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 50 V Gate-to-Source Leakage Current IGSS TJ = 25C TJ = 125C TJ = 25C VGS = 0 V, ID = 250 mA 60 71 1 500 100 10 450 150 1.0 4.0 VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 200 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25C TJ = 85C 0.8 0.7 1.2 V CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 W VGS = 4.5 V, VDS = 10 V; ID = 200 mA 24.5 VGS = 0 V, f = 1 MHz, VDS = 20 V 4.2 2.2 0.7 0.1 0.3 0.1 12.2 9.0 55.8 29 ns nC pF gFS VDS = 5 V, ID = 200 mA 1.19 1.33 80 1.6 2.5 S 2.5 nA mA nA nA V mV/C W V mV/C mA Symbol Test Condition Min Typ Max Units VDS = 0 V, VGS = 20 V VDS = 0 V, VGS = 10 V VDS = 0 V, VGS = 5.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA SWITCHING CHARACTERISTICS, VGS = V (Note 3) 2. Pulse Test: pulse width 300 ms, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 2N7002K TYPICAL CHARACTERISTICS 1.6 VGS = 10 V 9.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V ID, DRAIN CURRENT (A) 4.0 V 1.2 ID, DRAIN CURRENT (A) 1.2 0.8 0.8 3.5 V 3.0 V 0.4 2.5 V 0 0 2 4 6 0.4 TJ = 25C 0 TJ = 125C 0 2 TJ = -55C 4 6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = -55C VGS = 4.5 V TJ = 125C TJ = 85C TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 Figure 2. Transfer Characteristics VGS = 10 V TJ = 125C TJ = 85C TJ = 25C TJ = -55C 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 3. On-Resistance vs. Drain Current and Temperature 2.4 2.0 1.6 1.2 0.8 0.4 ID = 200 mA ID = 500 mA RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.2 Figure 4. On-Resistance vs. Drain Current and Temperature ID = 0.2 A 1.8 VGS = 4.5 V VGS = 10 V 1.4 1.0 2 4 6 8 10 0.6 -50 -25 0 25 50 75 100 125 150 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance vs. Gate-to-Source Voltage Figure 6. On-Resistance Variation with Temperature http://onsemi.com 3 2N7002K TYPICAL CHARACTERISTICS Ciss C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (V) 30 5 4 3 2 1 0 TJ = 25C ID = 0.2 A 20 TJ = 25C VGS = 0 V Coss 10 0 Crss 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 10 VGS = 0 V IS, SOURCE CURRENT (A) Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1 TJ = 85C 0.1 TJ = 25C 0.01 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 2N7002K PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 E 1 2 HE c e b q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 A A1 L L1 VIEW C STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 2N7002K/D |
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